Parameter generation for semiconductor device trapped-charge modeling
US10713405B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 9, 2016 |
| Grant date | Jul 14, 2020 |
| Priority date | — |
| Expiry date | Aug 11, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F2111/08
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for generating semiconductor device model parameters includes receiving semiconductor device performance data of statistical instances of semiconductor devices, for a plurality of areal trapped charge densities Model parameters are extracted to produce individual model instances, each corresponding to the respective statistical instances for the areal trapped charge densities. Statistics of the extracted model parameters are modeled by processing the individual model instances to determine, for each areal trapped charge density, moments describing non-normal marginal distributions of the extracted model parameters and correlations between the extracted model parameters. Semiconductor device model parameters are generated for use in simulating a circuit using the determined moments and the determined correlations, for a selected areal trapped charge density.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.