Alternative designs for magnetic recording assisted by two spin hall effect (SHE) layers in the write gap
US10714136B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 6, 2019 |
| Grant date | Jul 14, 2020 |
| Priority date | — |
| Expiry date | Sep 6, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B5/4826
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A Spin Hall Effect (SHE) assisted magnetic recording device is disclosed wherein a stack of two SHE layers with an intermediate insulation layer is formed between a main pole (MP) trailing side and trailing shield (TS) bottom surface. Both SHE layers are a Spin Hall Angle (SHA) material with an absolute value for SHA>0.05 and each have front sides at the air bearing surface (ABS) or recessed therefrom. One current (I1) is applied between the MP trailing side and the first SHE layer and is spin polarized to generate spin transfer torque that tilts a local MP magnetization to a direction that enhances a MP write field. Second current (I2) is applied between the second SHE layer and TS and is spin polarized to generate spin transfer torque that tilts a local TS magnetization to a direction that increases the TS return field and improves bit error rate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.