Semiconductor device and method of forming the same
US10714342B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 18, 2018 |
| Grant date | Jul 14, 2020 |
| Priority date | — |
| Expiry date | Jan 9, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/511
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices and method of forming the same are disclosed. One of the semiconductor devices includes a substrate, a gate structure, a plug and a hard mask structure. The gate structure is disposed over the substrate. The plug is disposed over and electrically connected to the gate structure. The hard mask structure is disposed over the gate structure and includes a first hard mask layer and a second hard mask layer. The first hard mask layer surrounds and is in contact with the plug. The second hard mask layer surrounds the first hard mask layer and has a bottom surface at a height between a top surface and a bottom surface of the first hard mask layer. A material of the first hard mask layer is different from a material of the second hard mask layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.