Structure and formation method of semiconductor device with self-aligned conductive features
US10714421B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 29, 2017 |
| Grant date | Jul 14, 2020 |
| Priority date | — |
| Expiry date | Dec 20, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53266
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a semiconductor substrate and a conductive line over the semiconductor substrate. The semiconductor device structure also includes a conductive via on the conductive line. The conductive via has an upper portion and a protruding portion. The protruding portion extends from a bottom of the upper portion towards the conductive line. The bottom of the upper portion is wider than a top of the upper portion. The semiconductor device structure further includes a dielectric layer over the semiconductor substrate, and the dielectric layer surrounds the conductive line and the conductive via.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.