Method of manufacturing semiconductor device
US10714499B2 · kind B2 · utility
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1References
10Claims
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Assignee
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Key dates
| Filing date | Jun 25, 2019 |
| Grant date | Jul 14, 2020 |
| Priority date | — |
| Expiry date | Jun 25, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32134
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The method of manufacturing a semiconductor device include: forming conductive patterns in interlayer spaces between interlayer insulating layers, the conductive patterns being separated from each other by a slit passing through the interlayer insulating layers, wherein the conductive patterns include a first by-product; generating a second by-product of a gas phase by reacting the first by-product remaining in the conductive patterns with source gas; and performing an out-gassing process to remove the second by-product.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.