Patent · US Active

Method of forming a semiconductor device comprising at least one germanium nanowire

US10714595B2 · kind B2 · utility

0Cited by

2References

13Claims

0Family size

Assignee

IMEC VZW · BE

Inventors

Liesbeth Witters · Linden, BE
Kurt Wostyn · Holsbeek, BE

Key dates

Filing date	Jul 2, 2018
Grant date	Jul 14, 2020
Priority date	—
Expiry date	Nov 27, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH10D62/121
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Example embodiments relate to germanium nanowire fabrication. One embodiment includes a method of forming a semiconductor device that includes at least one Ge nanowire. The method includes providing a semiconductor structure that includes at least one, the at least one fin including a stack of at least one Ge layer alternative with SiGe layers. The method also includes at least partially oxidizing the SiGe layer into SiGeOx. Further, the method includes capping the fin with a dielectric material. In addition, the method includes annealing. Still further, the method includes selectively removing the dielectric material and the SiGeOx.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.