Semiconductor device
US10714606B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 5, 2016 |
| Grant date | Jul 14, 2020 |
| Priority date | — |
| Expiry date | Sep 16, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/513
Abstract
A semiconductor device includes a conductive substrate, a channel forming layer, a first electrode, and a second electrode. The channel forming layer is located above the conductive substrate and includes at least one hetero-junction structure. The hetero-junction structure includes a first GaN-type semiconductor layer providing a drift region and a second GaN-type semiconductor layer having a bandgap energy greater than the first GaN-type semiconductor layer. A total fixed charge quantity of charges in the first GaN-type layer and the second GaN-type layer is from 0.5×1013 to 1.5×1013 cm−2. The charges in the first GaN-type layer and the second GaN-type layer include charges generated by the polarization in the first GaN-type layer. Accordingly, the semiconductor device capable of improving a break-down voltage and decreasing an on-resistance is obtained.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.