CMP stop layer and sacrifice layer for high yield small size MRAM devices
US10714679B2 · kind B2 · utility
4Cited by
4References
20Claims
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Key dates
| Filing date | Feb 8, 2018 |
| Grant date | Jul 14, 2020 |
| Priority date | — |
| Expiry date | Feb 8, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/80
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
An array, such as an MRAM (Magnetic Random Access Memory) array formed of a multiplicity of layered thin film devices, such as MTJ (Magnetic Tunnel Junction) devices, can be simultaneously formed in a multiplicity of horizontal widths in the 60 nm range while all having top electrodes with substantially equal thicknesses and coplanar upper surfaces. This allows such a multiplicity of devices to be electrically connected by a common conductor without the possibility of electrical opens and with a resulting high yield.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.