Ruthenium removal composition and method of producing magnetoresistive random access memory
US10714682B2 · kind B2 · utility
0Cited by
3References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 11, 2019 |
| Grant date | Jul 14, 2020 |
| Priority date | — |
| Expiry date | Jan 11, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An object is to provide a ruthenium removal composition capable of dissolving Ru while suppressing dissolution of CoFeB, and a method of producing a magnetoresistive random access memory (MRAM) using the same. A ruthenium removal composition of the present invention contains orthoperiodic acid and water, and the pH is 11 or more. It is preferable that the content of orthoperiodic acid in the ruthenium removal composition is 0.01% to 5% by mass with respect to the total mass of the composition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.