Patent · US Active

High speed and high precision characterization of VTsat and VTlin of FET arrays

US10718806B2 · kind B2 · utility

0Cited by
1References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateOct 21, 2016
Grant dateJul 21, 2020
Priority date
Expiry dateJul 1, 2037

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C2029/5004
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

The present disclosure relates to circuit structures and, more particularly, to circuit structures which detect high speed and high precision characterization of VTsat and VTlin of FET arrays and methods of manufacture and use. The circuit includes a control loop comprised of a differential amplifier, a plurality of FET arrays, and at least one analog switch enabling selection between a calibration mode and an operation mode.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.