High speed and high precision characterization of VTsat and VTlin of FET arrays
US10718806B2 · kind B2 · utility
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20Claims
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Key dates
| Filing date | Oct 21, 2016 |
| Grant date | Jul 21, 2020 |
| Priority date | — |
| Expiry date | Jul 1, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2029/5004
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present disclosure relates to circuit structures and, more particularly, to circuit structures which detect high speed and high precision characterization of VTsat and VTlin of FET arrays and methods of manufacture and use. The circuit includes a control loop comprised of a differential amplifier, a plurality of FET arrays, and at least one analog switch enabling selection between a calibration mode and an operation mode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.