Phase-shift mask for extreme ultraviolet lithography
US10719008B2 · kind B2 · utility
2Cited by
4References
20Claims
0Family size
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Key dates
| Filing date | Jun 16, 2017 |
| Grant date | Jul 21, 2020 |
| Priority date | — |
| Expiry date | Jul 20, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/52
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A phase-shift mask for extreme ultraviolet (EUV) lithography may be provided. The phase-shift mask may include a substrate, a reflection layer on the substrate, and phase-shift patterns including at least one metal nitride on the reflection layer. The at least one metal nitride may include at least one of TaN, TiN, ZrN, HfN, CrN, VN, NbN, MoN, WN, AlN, GaN, ScN, and YN.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.