Method of manufacturing semiconductor device, substrate processing apparatus and non-transitory computer-readable recording medium
US10720325B2 · kind B2 · utility
2Cited by
12References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 22, 2018 |
| Grant date | Jul 21, 2020 |
| Priority date | — |
| Expiry date | Jan 22, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02277
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided is a technique which includes forming on a substrate an oxide film containing silicon or a metal element and doped with a dopant by performing a cycle a predetermined number of times, wherein the cycle includes sequentially and non-simultaneously performing: (a) supplying a first gas to the substrate wherein the first gas is free of chlorine and contains boron or phosphorus as the dopant; (b) supplying a second gas to the substrate wherein the second gas contains silicon or the metal element; and (c) supplying a third gas to the substrate wherein the third gas contains oxygen.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.