Method for fabricating semiconductor structure
US10720440B2 · kind B2 · utility
0Cited by
11References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 21, 2018 |
| Grant date | Jul 21, 2020 |
| Priority date | — |
| Expiry date | Jul 19, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/035
Abstract
A method for fabricating a semiconductor structure is shown. A first gate of a first device and a second gate of a second device are formed over a semiconductor substrate. First LDD regions are formed in the substrate beside the first gate using the first gate as a mask. A conformal layer is formed covering the first gate, the second gate and the substrate, wherein the conformal layer has sidewall portions on sidewalls of the second gate. Second LDD regions are formed in the substrate beside the second gate using the second gate and the sidewall portions of the conformal layer as a mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.