Semiconductor layer sequence having pre- and post-barrier layers and quantum wells

US10720549B2 · kind B2 · utility

Assignee

• Osram OLED GMBH · DE

Inventors

• Werner Bergbauer · Windberg, DE
• Joachim Hertkorn · Neukirchen, DE

Key dates

• Filing date: Sep 4, 2017
• Grant date: Jul 21, 2020
• Expiry date: Sep 4, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S5/3425
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

In an embodiment a semiconductor layer sequence includes a pre-barrier layer including AlGaN, a pre-quantum well including InGaN having a first band gap, a multi-quantum well structure including a plurality of alternating main quantum wells of InGaN having a second band gap and main barrier layers of AlGaN or AlInGaN, wherein the second band gap is smaller than the first band gap and the main quantum wells are configured to generate a radiation having a wavelength of maximum intensity between 365 nm and 490 nm inclusive, a post-quantum well with a third band gap which is larger than the second band gap, a post-barrier layer including AlGaN or AlInGaN and an electron-blocking layer including AlGaN.