Light emitting diode device and manufacturing method thereof
US10720555B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 28, 2018 |
| Grant date | Jul 21, 2020 |
| Priority date | — |
| Expiry date | Nov 28, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8583
Abstract
A light emitting diode device includes a light emitting diode chip, a wavelength conversion layer including a bottom surface facing a top surface of the light emitting diode chip, and an interlayer having a first portion between the light emitting diode chip and a part of the bottom surface of the wavelength conversion layer, and a second portion extending from the first portion and connected between a remaining part of the bottom surface of the wavelength conversion layer and a side surface of the light emitting diode chip. The second portion has a side surface including a linear surface substantially aligning with a side surface of the wavelength conversion layer, and a curved surface having a first end connected to the linear surface and a second end connected to the side surface of the light emitting diode chip. The linear surface and the curved surface define a chamfer angle.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.