Fu-Hsin Chen
38Patents
7h-index
53Co-inventors
72Inventor score
Filing activity: Dec 20, 1995 → May 29, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6924531B2 | LDMOS device with isolation guard rings | Electricity | 51 | Expired |
| US8174071B2 | High voltage LDMOS transistor | Electricity | 23 | Active |
| US5615580A | Bicycle gear selector mechanism | Emerging Cross-Sectional Technologies | 12 | Expired |
| US7508032B2 | High voltage device with low on-resistance | Electricity | 10 | Active |
| US7960786B2 | Breakdown voltages of ultra-high voltage devices by forming tunnels | Electricity | 9 | Active |
| US7196375B2 | High-voltage MOS transistor | Electricity | 8 | Expired |
| US7768071B2 | Stabilizing breakdown voltages by forming tunnels for ultra-high voltage devices | Electricity | 8 | Active |
| US7525155B2 | High voltage transistor structure for semiconductor device | Electricity | 7 | Active |
| US7525150B2 | High voltage double diffused drain MOS transistor with medium operation voltage | Electricity | 7 | Expired |
| US8389341B2 | Lateral power MOSFET with high breakdown voltage and low on-resistance | Electricity | 7 | Active |
| US7045414B2 | Method of fabricating high voltage transistor | Electricity | 5 | Expired |
| US7247909B2 | Method for forming an integrated circuit with high voltage and low voltage devices | Electricity | 5 | Expired |
| US10262997B2 | High-voltage LDMOSFET devices having polysilicon trench-type guard rings | Electricity | 4 | Active |
| US7989890B2 | Lateral power MOSFET with high breakdown voltage and low on-resistance | Electricity | 4 | Active |
| US10256332B1 | High hole mobility transistor | Electricity | 3 | Active |
| US7868422B2 | MOS device with a high voltage isolation structure | Electricity | 2 | Active |
| US7888216B2 | Method of fabricating a high performance power MOS | Electricity | 2 | Active |
| US7994580B2 | High voltage transistor with improved driving current | Electricity | 2 | Active |
| US7183171B2 | Pyramid-shaped capacitor structure | Electricity | 1 | Expired |
| US10692857B2 | Semiconductor device combining passive components with HEMT | Electricity | 1 | Active |
| US8268691B2 | High voltage transistor with improved driving current | Electricity | 1 | Active |
| US10867993B2 | Touch sensing circuits and methods for detecting touch events | Electricity | 0 | Active |
| US10892320B2 | Semiconductor devices having stacked trench gate electrodes overlapping a well region | Electricity | 0 | Active |
| US10720555B2 | Light emitting diode device and manufacturing method thereof | Electricity | 0 | Active |
| US12008260B2 | Method of storage space management for improving endurance of storage devices | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.