Variable resistance memory devices, and methods of forming variable resistance memory devices
US10720577B2 · kind B2 · utility
0Cited by
8References
19Claims
0Family size
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Key dates
| Filing date | Jan 4, 2018 |
| Grant date | Jul 21, 2020 |
| Priority date | — |
| Expiry date | Jan 4, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8836
Abstract
Variable resistance memory devices are provided. A variable resistance memory device includes conductive lines and a memory cell including a variable resistance element on one of the conductive lines. The variable resistance memory device includes a first insulating region between the conductive lines. Moreover, the variable resistance memory device includes a second insulating region on the first insulating region between the conductive lines. Methods of forming variable resistance memory devices are also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.