Gyuhwan Oh
14Patents
7h-index
26Co-inventors
62Inventor score
Filing activity: Jul 10, 2007 → Jan 26, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8263455B2 | Method of forming variable resistance memory device | Electricity | 13 | Active |
| US9214382B2 | Semiconductor devices including air gap spacers | Electricity | 12 | Active |
| US7863173B2 | Variable resistance non-volatile memory cells and methods of fabricating same | Electricity | 10 | Active |
| US8278206B2 | Variable resistance memory device and methods of forming the same | Physics | 10 | Active |
| US9318379B2 | Methods of manufacturing semiconductor devices including air gap spacers | Electricity | 9 | Active |
| US9029828B2 | Phase-change memory devices including thermally-isolated phase-change layers and methods of fabricating the same | Electricity | 9 | Active |
| US9496223B2 | Semiconductor devices including spacers | Electricity | 8 | Active |
| US8501623B2 | Method of forming a semiconductor device having a metal silicide and alloy layers as electrode | Electricity | 5 | Active |
| US8558348B2 | Variable resistance memory device and methods of forming the same | Physics | 4 | Active |
| US11127900B2 | Variable resistance memory devices, and methods of forming variable resistance memory devices | Electricity | 0 | Active |
| US11502132B2 | Semiconductor memory device | Electricity | 0 | Active |
| US11195997B2 | Variable resistance memory devices including self-heating layer and methods of manufacturing the same | Electricity | 0 | Active |
| US10720577B2 | Variable resistance memory devices, and methods of forming variable resistance memory devices | Electricity | 0 | Active |
| US11387410B2 | Semiconductor device including data storage material pattern | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.