Patent · US Active

Scattering parameter calibration to a semiconductor layer

US10725138B2 · kind B2 · utility

0Cited by

6References

20Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Christoph Wagner · Remchingen, DE
Oliver Frank · Hannover, DE
Jochen Schrattenecker · Eisenlohrsweg, AT
Harald Kainmueller · Linz, AT

Key dates

Filing date	Nov 15, 2016
Grant date	Jul 28, 2020
Priority date	—
Expiry date	Sep 3, 2038

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2223/6683
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

A compound may include a set of integrated circuits. An integrated circuit, of the set of integrated circuits, may include calibration standards integrated at a silicon layer of the integrated circuit. The integrated circuit may be included in a package, and a calibration standard, of the calibration standards, may be available to at least one port of a set of ports of the integrated circuit.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.