Patent · US Active

Memory device with improved writing features

US10726905B2 · kind B2 · utility

1Cited by
4References
26Claims
0Family size

Assignee

Inventors

Key dates

Filing dateSep 21, 2018
Grant dateJul 28, 2020
Priority date—
Expiry dateSep 29, 2038

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C2207/229
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

The present invention relates to a method of performing a write access phase for a memory device and comprising:

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.