Method for manufacturing a semiconductor device
US10727045B2 · kind B2 · utility
1Cited by
21References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 30, 2018 |
| Grant date | Jul 28, 2020 |
| Priority date | — |
| Expiry date | Apr 30, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/528
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device includes depositing a dielectric layer over a substrate, performing a first patterning to form an opening in the dielectric layer, and depositing an oxide film over and contacting the dielectric layer and within the opening in the dielectric layer. The oxide film is formed from multiple precursors that are free of O2, and depositing the oxide film includes forming a plasma of a first precursor of the multiple precursors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.