Slurry and manufacturing semiconductor using the slurry
US10727076B2 · kind B2 · utility
0Cited by
3References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 25, 2018 |
| Grant date | Jul 28, 2020 |
| Priority date | — |
| Expiry date | Oct 25, 2038 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23F3/04
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure provides a method for planarizing a metal-dielectric surface. The method includes: providing a slurry to a first metal-dielectric surface, wherein the first metal-dielectric surface comprises a silicon oxide portion and a metal portion, and wherein the slurry comprises a ceria compound; and performing a chemical mechanical polish (CMP) operation using the slurry to simultaneously remove the silicon oxide portion and the metal portion. The present disclosure also provides a method for planarizing a metal-dielectric surface and a method for manufacturing a semiconductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.