Method for manufacturing a power semiconductor device having a reduced oxygen concentration
US10727311B2 · kind B2 · utility
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2References
19Claims
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Key dates
| Filing date | Jul 31, 2018 |
| Grant date | Jul 28, 2020 |
| Priority date | — |
| Expiry date | Jul 31, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/393
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for forming a power semiconductor device is provided. The method includes: providing a semiconductor wafer grown by a Czochralski process and having a first side; forming an n-type substrate doping layer in the semiconductor wafer at the first side, the substrate doping layer having a doping concentration of at least 1017/cm3; and forming an epitaxy layer on the first side of the semiconductor wafer after forming the n-type substrate doping layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.