Semiconductor light source
US10727645B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 13, 2017 |
| Grant date | Jul 28, 2020 |
| Priority date | — |
| Expiry date | Mar 13, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8515
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor light source is disclosed. In one embodiment, a semiconductor light source includes at least one semiconductor laser for generating a primary radiation and at least one conversion element for generating a longer-wave visible secondary radiation from the primary radiation, wherein the conversion element for generating the secondary radiation comprises a semiconductor layer sequence having one or more quantum well layers, and wherein, in operation, the primary radiation is irradiated into the semiconductor layer sequence perpendicular to a growth direction thereof, with a tolerance of at most 15°.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.