Alfred Lell
97Patents
8h-index
79Co-inventors
81Inventor score
Filing activity: Sep 30, 1997 → May 24, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6849881B1 | Optical semiconductor device comprising a multiple quantum well structure | Electricity | 101 | Expired |
| US7106090B2 | Optical semiconductor device with multiple quantum well structure | Electricity | 55 | Expired |
| US7893424B2 | Semiconductor layer structure with superlattice | Electricity | 26 | Active |
| US6472718B2 | Semiconductor device | Electricity | 25 | Expired |
| US9130353B2 | Laser diode assembly and method for producing a laser diode assembly | Electricity | 14 | Active |
| US6844565B2 | Semiconductor component for the emission of electromagnetic radiation and method for production thereof | Electricity | 13 | Expired |
| US7005681B2 | Radiation-emitting semiconductor component and method for making same | Electricity | 13 | Expired |
| US8369370B2 | Laser light source and method for producing a laser light source | Electricity | 12 | Active |
| US7556974B2 | Optical semiconductor device with multiple quantum well structure | Electricity | 7 | Active |
| US8475025B2 | Light-emitting device | Physics | 5 | Active |
| US9508903B2 | Optoelectronic component and method for producing an optoelectronic component | Electricity | 5 | Active |
| US8858030B2 | Laser light source | Electricity | 5 | Active |
| US8073300B2 | Arrangement comprising a fiber-optic waveguide | Mechanical Engineering; Lighting; Heating | 4 | Active |
| US7822089B2 | Semiconductor layer structure with superlattice | Electricity | 4 | Active |
| US6339233B1 | Metal clad ridge waveguide (“MCRW”) laser semiconductor structure with doped semiconductor substrate | Electricity | 4 | Expired |
| US9531161B2 | Light-emitting assembly having a semiconductor layer sequence having an active zone on a columnar structure | Electricity | 3 | Active |
| US9407063B2 | Laser light source and method for producing a laser light source | Electricity | 3 | Active |
| US11011887B2 | Semiconductor laser diode | Electricity | 3 | Active |
| US10811843B2 | Semiconductor laser | Electricity | 3 | Active |
| US6703644B1 | Method for producing a semiconductor configuration | Electricity | 3 | Expired |
| US9054487B2 | Semiconductor stripe laser | Electricity | 3 | Active |
| US9048631B2 | Laser light source | Electricity | 3 | Active |
| US8256947B2 | Light-emitting device | Physics | 3 | Active |
| US7008810B2 | Method for fabricating at least one mesa or ridge structure or at least one electrically pumped region in a layer or layer sequence | Emerging Cross-Sectional Technologies | 3 | Expired |
| US6465270B2 | Process for producing a semiconductor device | Electricity | 2 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.