Depositing ruthenium layers in interconnect metallization
US10731250B2 · kind B2 · utility
9Cited by
19References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 4, 2018 |
| Grant date | Aug 4, 2020 |
| Priority date | — |
| Expiry date | Jul 27, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/53209
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In some embodiments, deposition processes for ruthenium (Ru) feature fill include deposition of a thin, protective Ru film under reducing conditions, followed by a Ru fill step under oxidizing conditions. The presence of protective Ru films formed under oxygen-free conditions or with an oxygen-removing operation can enable Ru fill without oxidation of an underlying adhesion layer or metal feature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.