Methods for detecting defects of a lithographic pattern

US10732124B2 · kind B2 · utility

Assignee

• IMEC VZW · BE

Inventors

• Sandip Halder · Bierbeek, BE
• Philippe Leray · La Hulpe, BE

Key dates

• Filing date: Sep 7, 2018
• Grant date: Aug 4, 2020
• Expiry date: Jan 4, 2039

Classification

• Technology area (CPC G): Physics
• CPC primary: G06T2207/30242
• WIPO field: Measurement
• WIPO sector: Instruments

Abstract

Example embodiments relate to methods for detecting defects of a lithographic pattern. One example embodiment includes a method for detecting defects of a lithographic pattern on a semiconductor wafer that includes a plurality of die areas. Each of the die areas has a region of interest (ROI) that includes a plurality of features forming the lithographic pattern. The method includes acquiring an image of at least one of the ROIs. The method also includes removing features touching an edge of the image. Further, the method includes counting a number of remaining features in the image.