Microwave plasma generating device for plasma oxidation of SiC
US10734199B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 18, 2018 |
| Grant date | Aug 4, 2020 |
| Priority date | — |
| Expiry date | Apr 12, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02236
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A microwave plasma generating device for plasma oxidation of SiC, comprising an outer cavity and a plurality of micro-hole/micro-nano-structured double-coupling resonant cavities disposed in the outer cavity. Each resonant cavity includes a cylindrical cavity. A micro-hole array formed by a plurality of micro-holes is uniformly distributed on a peripheral wall of the cylindrical cavity, a diameter of each of the micro-holes is an odd multiple of wavelength, and an inner wall of the cylindrical cavity has a metal micro-nano structure, the metal micro-nano structure has a periodic dimension of λ/n, where λ is wavelength of an incident wave, and n is refractive index of material of the resonant cavity. The outer cavity is provided with an gas inlet for conveying an oxygen-containing gas into the outer cavity, and the oxygen-containing gas forms an oxygen plasma around the resonant cavities for oxidizing SiC; a stage is disposed under the resonant cavities.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.