Power and RF devices implemented using an engineered substrate structure
US10734303B2 · kind B2 · utility
4Cited by
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15Claims
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Key dates
| Filing date | Nov 2, 2018 |
| Grant date | Aug 4, 2020 |
| Priority date | — |
| Expiry date | Nov 2, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An electronic device includes a support structure comprising a polycrystalline ceramic core, a first adhesion layer coupled to the polycrystalline ceramic core, a conductive layer coupled to the first adhesion layer, a second adhesion layer coupled to the conductive layer, and a barrier layer coupled to the second adhesion layer. The electronic device also includes a buffer layer coupled to the support structure, a contact layer coupled to the buffer layer, and a field-effect transistor (FET) coupled to the contact layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.