Method for forming semiconductor device structure with overlay grating
US10734325B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 24, 2019 |
| Grant date | Aug 4, 2020 |
| Priority date | — |
| Expiry date | Oct 24, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2223/5446
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a semiconductor device structure is provided. The method includes forming a first overlay grating over a substrate. The method includes forming a layer over the first overlay grating. The method includes forming a second overlay grating over the layer. The second overlay grating has a third strip portion and a fourth strip portion, the third strip portion and the fourth strip portion are elongated in the first elongated axis and are spaced apart from each other, there is a second distance between a third sidewall of the third strip portion and a fourth sidewall of the fourth strip portion, the third sidewall faces away from the fourth strip portion, the fourth sidewall faces the third strip portion, the first distance is substantially equal to the second distance, and the first trench extends across the third strip portion and the fourth strip portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.