Metal oxide and semiconductor device
US10734413B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2017 |
| Grant date | Aug 4, 2020 |
| Priority date | — |
| Expiry date | Jun 29, 2037 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F2201/44
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A novel metal oxide is provided. The metal oxide has a plurality of energy gaps, and includes a first region having a high energy level of a conduction band minimum and a second region having an energy level of a conduction band minimum lower than that of the first region. The second region comprises more carriers than the first region. A difference between the energy level of the conduction band minimum of the first region and the energy level of the conduction band minimum of the second region is 0.2 eV or more. The energy gap of the first region is greater than or equal to 3.3 eV and less than or equal to 4.0 eV and the energy gap of the second region is greater than or equal to 2.2 eV and less than or equal to 2.9 eV.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.