Image sensor including transmitting layers having low refractive index
US10734426B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 14, 2018 |
| Grant date | Aug 4, 2020 |
| Priority date | — |
| Expiry date | Dec 14, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
An image sensor is provided to include image pixels and phase difference detection pixels. The image pixels may include image photodiodes formed in a substrate; color filters formed over the substrate and vertically overlapping with the image photodiodes; and image micro lenses over the color filters. The phase difference detection pixels may include phase difference detection photodiodes formed in the substrate; transmitting layers formed over the substrate and vertically overlapping with the phase difference detection photodiodes; guide patterns formed between the substrate and the transmitting layers; and phase difference detection micro lenses over the transmitting layers. The transmitting layers may have a refractive index lower than the color filters and the phase difference detection micro lenses.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.