Method for producing an optoelectronic device comprising a plurality of gallium nitride diodes
US10734439B2 · kind B2 · utility
2Cited by
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15Claims
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Key dates
| Filing date | May 13, 2016 |
| Grant date | Aug 4, 2020 |
| Priority date | — |
| Expiry date | May 13, 2036 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H29/842
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing an optoelectronic device, including the successive steps of: a) transferring, onto a surface of a control integrated circuit including a plurality of metal connection pads, an active diode stack including at least first and second doped semiconductor layers of opposite conductivity types, so that the second layer of the stack is electrically connected to the metal pads of the control circuit; and b) forming in the active stack trenches delimiting a plurality of diodes connected to different metal pads of the control circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.