Patent · US Active

Optoelectronic device with light-emitting diodes

US10734442B2 · kind B2 · utility

3Cited by
1References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateDec 28, 2017
Grant dateAug 4, 2020
Priority date
Expiry dateDec 28, 2037

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10H20/8514

Abstract

A method of manufacturing an optoelectronic device, comprising the successive steps of: a) providing a substrate at least partially made of a semiconductor material and having first and second opposite faces; b) forming light-emitting diodes on the substrate, each light-emitting diode comprising a semiconductor microwire or nanowire covered by a shell; c) forming an encapsulation layer surrounding the light-emitting diodes; d) forming conductive pads on the encapsulation layer, on the side of the encapsulation layer opposite to the substrate, in contact with the light-emitting diodes; and e) forming through openings in the substrate from the side of the second face, said openings being opposite at least part of the light-emitting diodes and delimiting walls in the substrate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.