Patent · US Active

Method of producing an optical sensor at wafer-level and optical sensor

US10734534B2 · kind B2 · utility

0Cited by

3References

12Claims

0Family size

Assignee

AMS AG · AT

Inventors

Harald Etschmaier · Graz, AT
Gregor Toschkoff · Graz, AT
Thomas Bodner · Seiersberg, AT
Franz Schrank · Graz, AT

Key dates

Filing date	Jul 22, 2016
Grant date	Aug 4, 2020
Priority date	—
Expiry date	Sep 8, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH10F55/155
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

A method of producing an optical sensor at wafer-level, comprising the steps of providing a wafer having a main top surface and a main back surface and arrange at or near the top surface of the wafer at least one first integrated circuit having at least one light sensitive component. Furthermore, providing in the wafer at least one through-substrate via for electrically contacting the top surface and back surface and forming a first mold structure by wafer-level molding a first mold material over the top surface of the wafer, such that the first mold structure at least partly encloses the first integrated circuit. Finally, forming a second mold structure by wafer-level molding a second mold material over the first mold structure, such that the second mold structure at least partly encloses the first mold structure.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.