Method of manufacturing a semiconductor device

US10741541B2 · kind B2 · utility

Assignee

• Infineon Technologies Dresden GmbH & Co. KG · DE

Inventors

• Joachim Weyers · Grevesmühlen, DE
• Markus Schmitt · Neubiberg, DE
• Armin Tilke · Beacon, US
• Stefan Tegen · Dresden, DE
• Thomas Bertrams · Dresden, DE

Key dates

• Filing date: Oct 4, 2016
• Grant date: Aug 11, 2020
• Expiry date: May 19, 2037

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/519
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method of manufacturing a semiconductor device includes forming an amorphous silicon layer over a first isolation layer. The method further includes simultaneously forming a gate oxide layer of a transistor device and transforming the amorphous silicon layer into a polycrystalline silicon layer by a thermal oxidation process. Herein a cover oxide layer is formed on the polycrystalline silicon layer.