Inventor · Dresden, DE

Stefan Tegen

53Patents
4h-index
39Co-inventors
62Inventor score

Filing activity: May 2, 2005 → Oct 16, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US7659602B2 Semiconductor component with MIM capacitor Electricity 8 Active
US7851356B2 Integrated circuit and methods of manufacturing the same Electricity 7 Active
US7371645B2 Method of manufacturing a field effect transistor device with recessed channel and corner gate device Electricity 6 Expired
US7291532B2 Low resistance contact in a semiconductor device Electricity 4 Expired
US8987090B2 Method of manufacturing a semiconductor device with device separation structures Electricity 4 Active
US7763514B2 Method of manufacturing a transistor and memory cell array Electricity 3 Active
US8980714B2 Semiconductor device with buried gate electrode structures Electricity 3 Active
US7473952B2 Memory cell array and method of manufacturing the same Electricity 2 Expired
US9107335B2 Method for manufacturing an integrated circuit and an integrated circuit Emerging Cross-Sectional Technologies 2 Active
US8284596B2 Integrated circuit including an array of diodes coupled to a layer of resistance changing material Physics 2 Active
US9209248B2 Power transistor Electricity 2 Active
US10020387B2 Method for manufacturing a bipolar junction transistor Electricity 1 Active
US8013377B2 Method for producing an integrated circuit and arrangement comprising a substrate Electricity 1 Active
US9368408B2 Method of manufacturing a semiconductor device with buried channel/body zone and semiconductor device Electricity 1 Active
US7777266B2 Conductive line comprising a capping layer Electricity 1 Active
US7804708B2 Integrated circuit including an array of memory cells and method Physics 1 Active
US9812369B2 BiMOS device with a fully self-aligned emitter-silicon and method for manufacturing the same Electricity 1 Active
US7439125B2 Contact structure for a stack DRAM storage capacitor Electricity 1 Active
US7456086B2 Semiconductor having structure with openings Electricity 1 Active
US10290735B2 Methods of manufacturing a semiconductor device with a buried doped region and a contact structure Electricity 0 Active
US9876105B2 Semiconductor device with buried doped region and contact structure Electricity 0 Active
US10672895B2 Method for manufacturing a bipolar junction transistor Electricity 0 Active
US9941375B2 Method for manufacturing a semiconductor device having silicide layers Electricity 0 Active
US11824114B2 Transistor device having a field plate in an elongate active trench Electricity 0 Active
US9984930B2 Method for processing a carrier Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.