Integrated vertical and lateral semiconductor devices
US10741551B2 · kind B2 · utility
0Cited by
4References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Dec 28, 2018 |
| Grant date | Aug 11, 2020 |
| Priority date | — |
| Expiry date | Dec 28, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit die that may have one vertical transistor and one horizontal transistor is disclosed. The transistors may have substantially different breakdown voltages. The vertical transistor may be used in power circuitry applications and the horizontal transistor may be used in logic circuitry applications.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.