Patent · US Active

Semiconductor devices

US10741574B2 · kind B2 · utility

1Cited by
11References
20Claims
0Family size

Assignee

Inventors

Key dates

Filing dateApr 17, 2018
Grant dateAug 11, 2020
Priority date
Expiry dateNov 7, 2038

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10B43/50
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Semiconductor devices are provided. A semiconductor device includes a substrate. The semiconductor device includes a stack structure including conductive layers stacked on the substrate. Moreover, the semiconductor device includes a dummy structure penetrating a stepped region of the stack structure. A portion of the dummy structure includes a first segment and a second segment. The first segment extends in a first direction in a plane parallel to an upper surface of the substrate. The second segment protrudes from the first segment in a second direction, in the plane, that intersects the first direction.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.