Dongseog Eun
14Patents
3h-index
30Co-inventors
56Inventor score
Filing activity: Aug 22, 2013 → Jan 2, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9230904B2 | Methods of forming a stack of electrodes and three-dimensional semiconductor devices fabricated thereby | Electricity | 17 | Active |
| US9449870B2 | Methods of forming a stack of electrodes and three-dimensional semiconductor devices fabricated thereby | Electricity | 5 | Active |
| US9558834B2 | Nonvolatile memory device and an erasing method thereof | Physics | 4 | Active |
| US9812526B2 | Three-dimensional semiconductor devices | Electricity | 2 | Active |
| US11177282B2 | Semiconductor devices | Electricity | 1 | Active |
| US11985820B2 | Semiconductor devices and data storage systems including the same | Electricity | 1 | Active |
| US10741574B2 | Semiconductor devices | Electricity | 1 | Active |
| US11716844B2 | Semiconductor memory devices having stacked structures therein that support high integration | Electricity | 0 | Active |
| US11963361B2 | Integrated circuit device including vertical memory device | Electricity | 0 | Active |
| US11895827B2 | Vertical non-volatile memory devices having a multi-stack structure with enhanced photolithographic alignment characteristics | Electricity | 0 | Active |
| US12219760B2 | Semiconductor chip and semiconductor device including the same | Electricity | 0 | Active |
| US10971518B2 | Three dimensional semiconductor memory devices | Electricity | 0 | Active |
| US12376286B2 | Vertical non-volatile memory devices having a multi-stack structure with enhanced photolithographic alignment characteristics | Electricity | 0 | Active |
| US11641743B2 | Semiconductor devices | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.