Vertical transfer gate storage for a global shutter in an image sensor
US10741593B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 24, 2019 |
| Grant date | Aug 11, 2020 |
| Priority date | — |
| Expiry date | May 24, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A pixel cell includes a photodiode disposed in a semiconductor material layer to accumulate image charge photogenerated in the photodiode in response to incident light. A storage transistor is coupled to the photodiode to store the image charge photogenerated in the photodiode. The storage transistor includes a storage gate disposed proximate a first surface of the semiconductor material layer. The storage gate includes a pair of vertical transfer gate (VTG) portions. Each one of the pair of VTG portions extends a first distance into the semiconductor material layer through the first surface of the semiconductor material layer. A storage node is disposed below the first surface of the semiconductor material layer and between the pair of VTG portions of the storage gate to store the image charge transferred from the photodiode in response to a storage signal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.