Oxygen inserted Si-layers for reduced substrate dopant outdiffusion in power devices

US10741638B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Martin Poelzl · Ossiach, AT
• Robert Haase · Rancho Palos Verdes, US
• Maximilian Roesch · Villach, AT
• Sylvain Leomant · Pörtschach am Wörther See, AT
• Andreas Meiser · Unterhaching, DE
• Bernhard Goller · Villach, AT
• Ravi Keshav Joshi · Klagenfurt, AT

Key dates

• Filing date: Aug 8, 2018
• Grant date: Aug 11, 2020
• Expiry date: Aug 8, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/256
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor device includes a doped Si base substrate, one or more device epitaxial layers formed over a main surface of the doped Si base substrate, a diffusion barrier structure, and a gate formed above the diffusion barrier structure. The diffusion barrier structure includes alternating layers of Si and oxygen-doped Si formed in an upper part of the doped Si base substrate adjacent the main surface of the doped Si base substrate, in a lower part of the one or more device epitaxial layers adjacent the main surface of the doped Si base substrate, or in one or more additional epitaxial layers disposed between the main surface of the doped Si base substrate and the one or more device epitaxial layers.