Bernhard Goller
42Patents
5h-index
82Co-inventors
68Inventor score
Filing activity: Nov 21, 2011 → Jan 8, 2024
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9355881B2 | Semiconductor device including a dielectric material | Electricity | 35 | Active |
| US10573742B1 | Oxygen inserted Si-layers in vertical trench power devices | Electricity | 9 | Active |
| US8785034B2 | Lithium battery, method for manufacturing a lithium battery, integrated circuit and method of manufacturing an integrated circuit | Emerging Cross-Sectional Technologies | 7 | Active |
| US9886660B2 | Semiconductor device having one or more of a shock sensor and an acceleration sensor | Physics | 6 | Active |
| US10580888B1 | Oxygen inserted Si-layers for reduced contact implant outdiffusion in vertical power devices | Electricity | 5 | Active |
| US10903078B2 | Methods for processing a silicon carbide wafer, and a silicon carbide semiconductor device | Electricity | 5 | Active |
| US9614256B2 | Lithium ion battery, integrated circuit and method of manufacturing a lithium ion battery | Emerging Cross-Sectional Technologies | 4 | Active |
| US10784161B2 | Semiconductor chip including self-aligned, back-side conductive layer and method for making the same | Electricity | 4 | Active |
| US9269961B2 | Lithium battery, method for manufacturing a lithium battery, integrated circuit and method of manufacturing an integrated circuit | Emerging Cross-Sectional Technologies | 4 | Active |
| US10433736B2 | Implantable vessel fluid sensor | Human Necessities | 3 | Active |
| US10741638B2 | Oxygen inserted Si-layers for reduced substrate dopant outdiffusion in power devices | Electricity | 3 | Active |
| US11031466B2 | Method of forming oxygen inserted Si-layers in power semiconductor devices | Electricity | 2 | Active |
| US10861966B2 | Vertical trench power devices with oxygen inserted Si-layers | Electricity | 2 | Active |
| US10714377B2 | Semiconductor device and semiconductor wafer including a porous layer and method of manufacturing | Electricity | 2 | Active |
| US9917333B2 | Lithium ion battery, integrated circuit and method of manufacturing a lithium ion battery | Emerging Cross-Sectional Technologies | 2 | Active |
| US10157765B2 | Methods for processing a semiconductor workpiece | Electricity | 1 | Active |
| US11476111B2 | Semiconductor device with a porous portion, wafer composite and method of manufacturing a semiconductor device | Electricity | 1 | Active |
| US10199255B2 | Method for providing a planarizable workpiece support, a workpiece planarization arrangement, and a chuck | Emerging Cross-Sectional Technologies | 1 | Active |
| US11742215B2 | Methods for forming a semiconductor device | Electricity | 1 | Active |
| US11404262B2 | Method for partially removing a semiconductor wafer | Electricity | 1 | Active |
| US9929438B2 | Method of manufacturing a lithium ion battery | Emerging Cross-Sectional Technologies | 1 | Active |
| US9064557B2 | Systems and methods for non-volatile memory | Physics | 0 | Active |
| US9627670B2 | Battery cell and method for making battery cell | Emerging Cross-Sectional Technologies | 0 | Active |
| US11373857B2 | Semiconductor surface smoothing and semiconductor arrangement | Electricity | 0 | Active |
| US10439062B2 | Metallization layers for semiconductor devices and methods of forming thereof | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.