Integrated circuit and method of forming an integrated circuit

US10748807B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Torsten Helm · Rabenau, DE
• Marc Probst · Radeberg, DE
• Uwe Rudolph · Dresden, DE

Key dates

• Filing date: Mar 6, 2019
• Grant date: Aug 18, 2020
• Expiry date: Mar 6, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor device includes a semiconductor body having a main surface and a rear surface opposite the main surface, and a trench that extends from the main surface of the semiconductor body towards the rear surface, the trench having an upper trench portion and a lower trench portion, the trench having a width measured along a plane parallel to the main surface. The upper trench portion includes curved sidewalls that that bow outward from a bottom of the upper trench portion. The lower trench portion includes generally planar sidewalls that extend from bottom of the upper trench portion at a first depth into the semiconductor body along the first direction to a contact region. An electrically conductive contact electrode is within the trench, is electrically insulated from the semiconductor body along sidewalls of the trench, and electrically connects to the semiconductor body at a bottom of the trench.