Epitaxial source and drain structures for high voltage devices
US10748899B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 26, 2017 |
| Grant date | Aug 18, 2020 |
| Priority date | — |
| Expiry date | Sep 26, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/856
Abstract
An integrated circuit having an epitaxial source and drain, which reduces gate burnout and increases switching speed so that is suitable for high voltage applications, is provided. The integrated circuit includes a semiconductor substrate having a high voltage N-well (HVNW) and a high voltage P-well (HVPW). The integrated circuit further includes a high-voltage device on the semiconductor substrate. The high-voltage device includes an epitaxial p-type source disposed in the HVNW, an epitaxial p-type drain disposed in the HVPW, and a gate arranged between the epitaxial p-type source and the epitaxial p-type drain on a surface of the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.