Inventor · Baoshan, TW

Yi-Huan Chen

52Patents
4h-index
34Co-inventors
58Inventor score

Filing activity: Feb 5, 2016 → May 21, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US10050033B1 High voltage integration for HKMG technology Electricity 13 Active
US10340357B2 Dishing prevention dummy structures for semiconductor devices Electricity 7 Active
US9831340B2 Semiconductor structure and associated fabricating method Electricity 5 Active
US10748899B2 Epitaxial source and drain structures for high voltage devices Electricity 4 Active
US11677022B2 Semiconductor structure and method of forming thereof Electricity 2 Active
US10553583B2 Boundary region for high-k-metal-gate(HKMG) integration technology Electricity 2 Active
US10516029B2 Dishing prevention dummy structures for semiconductor devices Electricity 2 Active
US10177043B1 Method for manufacturing multi-voltage devices using high-K-metal-gate (HKMG) technology Electricity 2 Active
US10510750B2 High voltage integration for HKMG technology Electricity 1 Active
US9853149B1 Floating grid and crown-shaping poly for improving ILD CMP dishing Electricity 1 Active
US11004844B2 Recessed STI as the gate dielectric of HV device Electricity 1 Active
US11302691B2 High voltage integration for HKMG technology Electricity 1 Active
US10535752B2 Method and related apparatus for reducing gate-induced drain leakage in semiconductor devices Electricity 1 Active
US10790279B2 High voltage integration for HKMG technology Electricity 1 Active
US10916542B2 Recessed STI as the gate dielectric of HV device Electricity 1 Active
US10937785B2 Semiconductor device Electricity 1 Active
US12021140B2 Semiconductor structure and method of forming thereof Electricity 1 Active
US11527531B2 Recessed gate for an MV device Electricity 1 Active
US12414361B2 Method of manufacturing a semiconductor device Electricity 0 Active
US12211926B2 Method and related apparatus for reducing gate-induced drain leakage in semiconductor devices Electricity 0 Active
US11569363B2 Dishing prevention dummy structures for semiconductor devices Electricity 0 Active
US11417649B2 Semiconductor device Electricity 0 Active
US11810973B2 Semiconductor structure and method of forming thereof Electricity 0 Active
US11855091B2 Boundary design for high-voltage integration on HKMG technology Electricity 0 Active
US10325964B2 OLED merged spacer device Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.