Semiconductor memory component integrating a nano-battery, semiconductor device including such a component and method using such a device

US10748917B2 · kind B2 · utility

Assignee

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Daeseok LEE · Grenoble, FR
• Gabriel Molas · Grenoble, FR
• Sami Oukassi · Saint-Égrève, FR

Key dates

• Filing date: May 3, 2018
• Grant date: Aug 18, 2020
• Expiry date: May 3, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8833

Abstract

A semiconductor component includes a first electrode, designated flat electrode, defining a plane; a second electrode, designated active electrode, separated from the first electrode by an electrolyte layer; a pillar, designated vertical pillar, extending essentially along an axis perpendicular to the plane defined by the flat electrode, the pillar including a third electrode, designated vertical electrode and an information storage layer, the information storage layer covering a surface of the vertical electrode; the flat electrode and the vertical pillar being laid out so as to form a memory point. In addition, the materials of the active electrode and the electrolyte layer are chosen so as to form an energy storage zone with the flat electrode.