Semiconductor device formed by oxide semiconductor and method for manufacturing same
US10748939B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 6, 2018 |
| Grant date | Aug 18, 2020 |
| Priority date | — |
| Expiry date | Dec 6, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device (100A) is provided with: a gate electrode (3); an oxide semiconductor layer (5); a thin-film transistor (101) including a gate insulating layer (4), a source electrode (7S), and a drain electrode (7D); an inter-layer insulating layer (11) arranged so as to cover the thin-film transistor (101) and come into contact with a channel area (5c) of the thin-film transistor (101); and a transparent electroconductive layer (19) arranged on the inter-layer insulating layer (11), the source electrode (7S) and the drain electrode (7D) each having a copper layer (7a), and the device being further provided with a copper oxide film (8) arranged between the source and drain electrodes and the inter-layer insulating layer (11). The inter-layer insulating layer (11) covers the drain electrode (7D) with the copper oxide film (8) interposed therebetween. The transparent electroconductive layer (19) is directly connected to the copper layer (7a) of the drain electrode (7D) inside a contact hole (CH1) formed in the inter-layer insulating layer (11), without the copper oxide film (8) being interposed therebetween.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.