Methods of forming redistribution lines and methods of manufacturing semiconductor devices using the same
US10748953B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 27, 2020 |
| Grant date | Aug 18, 2020 |
| Priority date | — |
| Expiry date | Feb 27, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/807
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device includes providing a semiconductor substrate having a top surface, on which has been formed a color filter and a micro-lens, and a bottom surface opposite to the top surface, forming a redistribution line on the bottom surface of the semiconductor substrate, and forming on the bottom surface of the semiconductor substrate a passivation layer covering the redistribution line. After the redistribution line and passivation layer are formed, an oxide layer between the redistribution line and the passivation is formed at a temperature that avoids thermal damage to the color filter and the micro-lens.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.