Semiconductor element
US10748992B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 9, 2018 |
| Grant date | Aug 18, 2020 |
| Priority date | — |
| Expiry date | Apr 5, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K10/26
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor element includes a semiconductor structure, a carbon nanotube and a conductive film. The semiconductor structure includes a P-type semiconductor layer and an N-type semiconductor layer and defines a first surface and a second surface. A thickness of the semiconductor structure ranges from 1 nanometer to 100 nanometers. The carbon nanotube is located on the first surface of the semiconductor. The conductive film is located on the second surface of the semiconductor. The conductive film is formed on the second surface by a depositing method or a coating method. The carbon nanotube, the semiconductor structure and the conductive film are stacked with each other to form a multi-layered stereoscopic structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.